Unit Price: | $ 1.38 |
Compared to conventional transistors, the SIRA00DP-T1-GE3 power MOSFET developed by Vishay is capable of fast switching between data lines while amplifying the signal itself. Its maximum power consumption is 6250 mW. The MOSFET transistor has a minimum operating temperature of -55 °C and a maximum operating temperature of 150 °C. The device is fabricated using TrenchFET technology. The N-channel MOSFET transistor operates in enhancement mode.
Transistor Polarity: N Channel
Drain-source voltage Vds : 30V
Continuous drain current Id: 100A
On-resistance Rds(on): 830 microohms
Transistor case style: PowerPAK SO
Transistor Mount: Surface Mount
Rds(on) test voltage Vgs : 10V
Threshold voltage Vgs: 2.2V
Power consumption Pd : 104W
Maximum operating temperature: 150°C
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Cooperation express: |
Q: When will we ship after payment?
A: In order to ensure that the products we ship are in good condition. Issued approximately 1-2 days after receiving your payment.
Q: What if the product is damaged during transportation?
A: We will use a more robust package when shipping to avoid damage to the goods, and we can purchase transportation insurance in advance to reduce the loss of in the transport. although this problem is not common.
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A: We have established good relationships with maintenance departments in many countries/regions in the world. For example, Venezuela, Iran, etc. If you have any questions within 3 days after receiving the goods, you can apply for after-sales service on the "My Order" page.
Q: Which express we support?
A: We will choose the cheapest and fastest transportation method for you. And we support DHL, UPS, TNT, Fedex, BRE, and also have express delivery services, such as Russia, the United States, Kuwait, etc.