TP65H035G4WS

The TP65H035G4WS 650V, 35mΩ Gallium Nitride (GaN) FET is a normally-off device using Transphorm's Gen IV platform. It combines state-of-the-art high-voltage GaN HEMTs with low-voltage silicon MOSFETs to deliver exceptional reliability and performance. It uses advanced epitaxy and patented design techniques to simplify manufacturability while increasing silicon efficiency by reducing gate charge, output capacitance, crossover loss and reverse recovery charge.

This is a brand-new original product, and the price may be more expensive than the substitute product, but the quality is guaranteed; welcome to buy!

Feature:

• JEDEC-compliant GaN technology

• Dynamic R_DS(on)eff production test

• Robust design powered by

— Wide door safety margin

— Transient overvoltage capability

• Enhanced surge current capability

• Very low Q_RR

• Reduced crossover loss

Benefit:

• Support AC-DC bridgeless totem-pole PFC design

— Increased power density

— Reduce system size and weight

— Lower overall system cost

• Improves the efficiency of hard-switching and soft-switching circuits

• Easy to drive with commonly used gate drivers

• GSD pin layout improves high-speed designs

Application:

• data communication

• Wide range of industries

• Photovoltaic inverters

• servo motor