S34ML01G100TFI000

The S34ML01G100TFI000 operates on 1.8 V_CC and V_CCQ power supplies and has ×8 or ×16 I/O interfaces. Its NAND cells provide the most cost-effective solutions for the solid-state mass storage market. The memory is divided into blocks that can be erased independently, so old data can be erased while valid data remains. In addition, the device also has a read cache function, which can improve the read throughput of large files. During a cache read, the device loads data into cache registers while simultaneously transferring the previous data to the I/O buffer to be read.

Product feature：

• Page Read / Program

– Random access: 25 µs (Max)

– Sequential access: 45 ns (Min)

– Program time / Multiplane Program time: 250 µs (Typ)

• Block Erase (S34MS01G1)

– Block Erase time: 2.0 ms (Typ)

• Reliability

– 100,000 Program / Erase cycles (Typ) (with 1-bit ECC per 528 bytes (×8) or 264 words (×16))

– 10-year Data retention (Typ)

– For one plane structure (1-Gb density)

– Block zero is valid and will be valid for at least 1,000 program erase cycles with ECC

– For two plane structures (2-Gb and 4-Gb densities)

– Blocks zero and one are valid and will be valid for at least 1,000 program-erase cycles with ECC