The article mainly introduces the various components needed by the hash board and their functions on the hash board.
1. Resistance
Code: R
Function: current limiting, partial pressure
Unit: Ohm (ohm or Ω)
Conversion: 1M=103K=106ohm
Law: The equivalent composite resistance value obtained after the resistors are connected in series is R=R1+R2;
The equivalent composite resistance value obtained after the resistors are connected in parallel is R=R1R2/(R1+R2);
Network resistor: Series network resistor RN, 8pinA type butt type;
Parallel network Resistor RP, 10pinB network type.
2. Capacity
Code: C
Function: filtering, coupling, blocking DC and passing AC
Unit: Farah F
Conversion: 1F=103mF=106uF=109nF=1012pF=1015fF
Law: The equivalent composite capacitance value obtained after the capacitors are connected in series is C=C1C2/(C1+C2);
The equivalent composite capacitance value obtained after the capacitors are connected in parallel is C=C1+C2;
Discharge capacity: CP
Polar capacitors: tantalum capacitors, aluminum capacitors.
3. Inductance
Code: L
Features: blocking AC, passing DC
Function: filtering, energy storage
Unit: Henry H
Conversion: 1H=103mH=106UH
Formula: Inductive reactance XL=2πf L
4. Diode
Code: D
Function: rectification, step-down, voltage stabilization, switching, detection, variable capacitance.
Features: unidirectional conductivity.
Type: The forward voltage of silicon diode is 0.6V~0.7V;
The forward voltage of the germanium diode is 0.2V~0.3V.
Polarity: One end of the colored band (or color ring) is negative.
Zener tube: DZ stabilizes the voltage and works in the reverse breakdown zone.
Light-emitting diode: LED, which emits light when the forward conduction is conducted.
5. Triode
Code: Q
Function: switch, zoom.
Amplification conditions: Transmitting junction is forward-biased, a collector is reverse-biased.
Classified by structure: NPN and PNP.
6. Field-effect tube
Features: Use electric field effect to control current.
Function: Switch, amplify, variable resistance.
Type: Junction FET
Insulated gate field effect tube MOS:
N-channel (depletion type and enhanced type)
P-channel (depletion type and enhanced type)
Principle: Use a small gate-source voltage to control a large drain current.
7. Crystal
Code: Y
Unit: Hz
Conversion: 1Hz= 10-3KH = 10-6MH
8. Other
Integrated Circuit: U
Connecter: CN