IPW60R041P6

IPW60R041P6 600V P6 Power Transistor

IPW60R041P6 is a revolutionary technology for high voltage power MOSFETs, designed according to the super-junction(SJ) principle and pioneered. enables higher system efficiency, especially at light loads, while being easy to design.

IPW60R041P6 combines the experience of the leading SJ MOSFET supplier with high-class innovation. The devices provide all benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter and cooler. Suitable for hard-switching and soft-switching topologies.

The device is housed in a PG-TO 247 package, marked 6R041P6. Pb-free plating, Halogen-free mold compound.

This is a brand-new original product, and the price may be more expensive than the substitute product, but the quality is guaranteed; welcome to buy!

Features:

Increased MOSFET DV/DT ruggedness

Extremely low losses due to very low FOM R_dson*Q_g and E_oss

Very high commutation ruggedness

Easy to use/drive

Qualified for industrial-grade applications according to JEDEC(J-STD20 and JESD22)

Applications:

For Antminer power supply chip repair parts.

PFC stages, hard switching PWM stages and resonant switching stages. e.g. PC Silverbox, Adapter, LCD&PDP TV, Lighting, Server, Telecom and UPS.

Parametrics:

I_D (@25°C): max 77.5 A

I_D: max 77.5 A

I_Dpuls: max 267 A

Mounting: THT

Operating Temperature: min -55 °C

P_tot: max 481 W

Package: TO-247

Pin Count: 3 Pins

Polarity: N

Q_G (typ @10V): 170nC

Q_G: 170 nC

R_{DS (on)} (@10V): max 41mΩ

R_{DS (on)}: max 41mΩ

R_th: 0.26K/W

R_thJA: max 62K/W

R_thJC: max 0.26 K/W

V_DS: max 600V

V_GS(th): min: 3.5V; max: 4.5V